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李峰博士.D.

冯 李,Ph值.D., P.E.

Micron Endowed Chair in Microelectronics, NGeM Director, FIB/SEM Director

办公室

Gauss-Johnson 217

电话

208-885-7571

电子邮件
邮寄地址

电 and 计算机工程
365滚球官网
875 Perimeter Drive, MS 1023
莫斯科,号码83844-1023

  • Ph.D., University of Wisconsin-Milwaukee
  • M.S., University of Texas at Arlington
  • M.S., Beijing University of Post and Telecommunications
  • B.S., Ocean University of China

  • ECE 310 Microelectronics I
  • ECE 311 Microelectronics I Lab
  • EC 330 Electromagnetic Theory
  • ECE 331 Electromagnetics Lab
  • ECE 350 Signals and Systems I
  • ECE 351 Signals and Systems I Lab
  • ECE 418/518 Introduction to Electronic Packaging
  • ECE 445 Introduction to VLSI Design
  • ECE 460 Semiconductor Devices
  • ECE 465/565 Introduction to Microelectronics Fabrication
  • ECE 480/482 Senior Design I
  • ECE 481/483 Senior Design II

  • Semiconductor device and IC design
  • Micro/nanofabrication and electronic packaging
  • ML/AI in VLSI design and manufacturing

冯李 received his Ph.D. in electrical engineering from the University of Wisconsin-Milwaukee, WI, 美国, in 2012. He was previously with Duke University, 达勒姆, NC, 美国, and the University of Texas at Arlington, TX, 美国. He joined the 365滚球官网, 莫斯科, ID, 美国, as an Assistant Professor of electrical and computer engineering in 2014 and was promoted to Associate Professor in 2020. He was named the Micron Endowed Professor in Microelectronics in 2022. His research interests include 3-D IC integration and packaging, silicon and compound semiconductor devices and ICs, and micro/nanofabrication. Dr. Li is a Senior Member of IEEE.

  • F. 李和J. 史, "Metal-to-Metal Flip-Chip Bonding for High-Temperature 3D SiC IC Integration and Packaging," 2023 IEEE Workshop on Microelectronics and Electron Devices (WMED), 博伊西, ID, 美国, 2023, pp. 1-4, doi: 10.1109 / WMED58543.2023.10097447
  • X. 陈,F. Li和H. Hess, "Trench Gate β-Ga₂O₃ MOSFETs: A Review," Engineering 研究 Express,卷. 5, no. 1, pp. 2023年3月1日至14日. DOI: 10.1088/2631 - 8695 / acc00c
  • F. Li, "3D Stacking of SiC Integrated Circuit Chips with Gold Wire Bonded Interconnects for Long-Duration High-Temperature Applications," IEEE Transactions on Components, Packaging and Manufacturing Technology,卷. 12, no. 10, pp. 1601-1608, October 2022. DOI: 10.1109 / TCPMT.2022.3210477
  • F. 李和S. Raveendran, "Wirebonding Based 3-D SiC IC Stacks for High Temperature Applications," 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC), 圣地亚哥, CA, 美国, 2022, pp. 2023-2027, doi: 10.1109 / ECTC51906.2022.00319
  • N. Totorica F. Li, “Signal and power integrity challenges for high-density system-on-package,” Semiconductor Science and Information Devices,卷. 4, no. 2, pp. 2022年10月1日至9日. DOI: 10.30564 /名称.v4i2.4475.
  • M. D. Cino和F. Li, "Flip chip die-to-wafer bonding review: gaps to high volume manufacturing," Semiconductor Science and Information Devices,卷. 4, no. 1, pp. 8-13, 2022. DOI: 10.30564 /名称.v4i1.4474
  • W. 胡和F. Li, “Scaling beyond 7nm node: an overview of gate-all-around FETs,” 2021 9th International Symposium on Next Generation Electronics (ISNE), pp. 1-6, doi: 10.1109 / ISNE48910.2021.9493305
  • M. Shawon和F. Li, “A review of the building blocks of silicon photonics: from fabrication perspective,” Semiconductor Science and Information Devices,卷. 1, no. 1, pp. 2019年10月29-35日.
  • F. Li, “S electrode materials,” in Inorganic Battery Materials, H. 王和B. Fokwa, Eds. 约翰威利 & 儿子,页. 2019年6月1日至14日.
  • Q. 李,F. Li和A. W. Owens, “Microbump processing for 3D IC integration,” 15th International Conference and Exhibition on Device Packaging,卷. 2019, No. DPC,页. 1028-1049, January 2019.
  • M. Binggeli和F. Li, “Scaling optical communication for on-chip interconnect,” 19th International Conference on Electronic Packaging Technology (ICEPT), pp. 2018年8月,1178-1183.
  • Y. 杨和F. Li, "Recent Advances in 3D Packaging for Medical Applications," 19th International Conference on Electronic Packaging Technology (ICEPT), pp. 2018年8月,1193-1197.
  • Y. S. Wase和F. Li, “Technology review of system in package,” 15th International Conference and Exhibition on Device Packaging,卷. 2017, No. DPC,页. 2017年1月1-20日.
  • F. 李,问. 刘,D。. P. Klemer, “Numerical simulation of high electron mobility transistors based on the spectral element method,” Applied Computational Electromagnetics Society Journal,卷. 31, no. 10, pp. 1144-1150, October 2016.
  • F. 李,问. 刘,D. P. Klemer, “Plasmon resonance effects in GaAs/AlGaAs heterojunction devices: an analysis based on spectral element simulation,” IEEE Transactions on Electron Devices,卷. 61, no. 5, pp. 1477-1482, 2014年5月.

365滚球官网

Buchanan Engineering Building Rm. 213

邮寄地址:

电 & 计算机工程
365滚球官网
875 Perimeter Drive MS 1023
莫斯科,号码83844-1023

电话:208-885-6554

传真:208-885-7579

电子邮件: ece-info@rockmark.net